CONTROLLED ANISOTROPIC ETCHING OF POLYSILICONBERGERON SF; DUNCAN BF.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 8; PP. 98-103; BIBL. 8 REF.Article

COMPUTER SIMULATION OF AN OXIDE WALLED EMITTER STL GATEROULSTON DJ; DEPEY M.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 1; PP. 21-22; BIBL. 4 REF.Article

LA GALERIE DE PRET D'ESTAMPES.DIDIER LECOMTE E.1977; MEDIATH. PUBLIQUES; FR.; DA. 1977; VOL. 11; NO 42; PP. 24-26Article

THE EFFECTS OF DIAMOND WEAR ON THE PRODUCTION AND PROPERTIES OF RULED DIFFRACTION GRATINGSVERRILL JF.1982; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1982; VOL. 15; NO 5; PP. 516-519; BIBL. 7 REF.Article

ETCHING CHARACTERISTICS FOR ORGANOSILICAENDO N; MATSUI S.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L109-L111; BIBL. 6 REF.Article

PREPARATION OF LARGE-AREA, ELECTRON-TRANSPARENT SILICON SPECIMENS BY ANISOTROPIC ETCHINGVARKER CJ; CHANG LH.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 143-146; BIBL. 8 REF.Article

DRY ETCHING CHALLENGES FINE PROCESSING IN THE SUBMICRON TECHNOLOGYFUJIOKA T.1982; JEE. JOURNAL OF ELECTRONIC ENGINEERING; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 192; PP. 60-64Article

COMMENTS ON: "SIMULATION OF ION-BEAM-ETCHED PAATERN PROFILES"VALLES ABARCA JA; GRAS MARTI A.1981; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY; ISSN 0022-5355; USA; DA. 1981; VOL. 21; NO 3; PP. 891-892; BIBL. 5 REF.Article

VLSI POLYSILICON ETCHING: A COMPARISON OF DIFFERENT TECHNIQUESWINKLER U.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 169-172Article

NEW SINGLE-MASK APPROACH TO BUBBLE DEVICE FABRICATIONNISHIDA H; UMEZAKI H; KOYAMA N et al.1983; IEEE TRANSACTIONS ON MAGNETICS; ISSN 0018-9464; USA; DA. 1983; VOL. 19; NO 1; PP. 2-6; BIBL. 11 REF.Article

LASER-ENHANCED PLATING AND ETCHING: MECHANISMS AND APPLICATIONSVON GUTFELD RJ; ACOSTA RE; ROMANKIW LT et al.1982; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1982; VOL. 26; NO 2; PP. 136-144; BIBL. 10 REF.Article

SELECTIVE REMOVAL OF IRON GARNET FILM ON TRANSPARENT SUBSTRATE BY LASER ETCHINGANDO K; TSUKAHARA S.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART 2; PP. 347-348; BIBL. 3 REF.Article

LES GALERIES DE PRET D'ART CONTEMPORAIN OU ARTOTHEQUESLECOMTE E.1982; MEDIATHEQUES PUBLIQUES; ISSN 0153-4270; FRA; DA. 1982 PUBL. 1983; VOL. 16; NO 64; PP. 33-35Article

THERMAL ETCHING OF A (100) SILICON SURFACEFUTAGAMI M; HAMAZAKI M.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PP. 1782; BIBL. 2 REF.Article

FABRICATION OF SUBMICRON PATTERN WITH AN EB LITHOGRAPHIC SYSTEM USING A FIELD EMISSION (FE) ELECTRON GUNHOSAKA S; ICHIHASHI M; HAYAKAWA H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. 543-549; BIBL. 21 REF.Article

UNE ENTREPRISE DU PLAN DE SAUVEGARDE: LA MICROPHOTOGRAPHIE DES ESTAMPESMELO M.1982; BIBLIOTEKOVEDENIE I BIBLIOGRAFIJA ZA RUBEZOM; ISSN 0320-7838; SUN; DA. 1982; NO 86; PP. 19-24Article

IC PROCESS MODELING AND TOPOGRAPHY DESIGNNEUREUTHER AR.1983; PROCEEDINGS OF THE IEEE; ISSN 0018-9219; USA; DA. 1983; VOL. 71; NO 1; PP. 121-128; BIBL. 70 REF.Article

METODIKA K URCENI OPTIMALNIKO SLOZENI OCHRANNEHO VOSKOVEHO KRYTU PRO ZDOBENI UZITKOVEHO SKLA LEPTACI LEPTACI TECHNIKOU = METHODE DE DETERMINATION DE LA COMPOSITION OPTIMALE DU REVETEMENT DE CIRE PROTECTEUR POUR LA DECORATION DU VERRE UTILITAIRE PAR LA TECHNIQUE DE GRAVURESASEK L; MEISSNEROVA H; BICEK Z et al.1983; SILIKATY; ISSN 0037-5241; CSK; DA. 1983; VOL. 27; NO 1; PP. 73-83; H.T. 1; ABS. RUS/ENG; BIBL. 2 REF.Article

MESSEN UND GRAVIEREN VON EINSPRITZPUMPENELEMENTEN FUER DIESELMOTOREN = MESURE ET GRAVURE D'ELEMENTS DE POMPES A INJECTION DE MOTEURS DIESELBLOCHER B.1983; F & M. FEINWERKTECHNIK & MESSTECHNIK; ISSN 0340-1952; DEU; DA. 1983; VOL. 91; NO 4; PP. 171-172Article

DEFECT ELIMINATING USING SI₃N₄ FILM PATTERNSMADA Y.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 11; PP. L683-L684; BIBL. 8 REF.Article

FORCES ACTING ON THE TOOL IN VIDEO DISC MASTERINGSHAHBENDER R.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 4; PP. 655-664; BIBL. 6 REF.Article

GAAS INTEGRATED CIRCUIT DEVELOPMENT FOR GIGABIT-RATE SIGNAL PROCESSINGCHAINULU UPADHYAYULA L; SMITH R; MATARESE R et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 522-541; BIBL. 10 REF.Article

SURFACE RIPPLES IN LASER-PHOTOCHEMICAL WET ETCHING OF GALLIUM ARSENIDETSUKADA N; SUGATA S; SAITOH H et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 189-191; BIBL. 17 REF.Article

NOUVELLE METHODE DE DECORATION DE LA VAISSELLE DE QUALITE ET DE CRISTAL, PAR GRAVURE PHOTOCHIMIQUEVARSHAVER L YA; KHVOROSTINA AI.1983; STEKLO I KERAMIKA; ISSN 0131-9582; SUN; DA. 1983; NO 3; PP. 13-15Article

SILICON SHADOW MASKS FOR FINE-FEATURE THIN-FILM DEPOSITIONSMAAH SANGO; VAN DUZER T.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 1; PP. 21-23; BIBL. 5 REF.Article